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| Advanced Technical Information High Voltage BIMOSFETTM in High Voltage ISOPLUS i4-PACTM Monolithic Bipolar MOS Transistor IXBF 9N140 IC25 IXBF 9N160 VCES VCE(sat) tf = = = = 7A 1400/1600 V 4.9V 40 ns 1 5 IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25C TC = 90C VGE = 15/0 V; RG = 100 W; TVJ = 125C RBSOA, Clamped inductive load; L = 100 H TC = 25C Conditions TVJ = 25C to 150C IXBF 9N140 IXBF 9N160 Maximum Ratings 1400 1600 20 7 4 12 0.8VCES 70 V V V A A A W Features * High Voltage BIMOSFETTM - substitute for high voltage MOSFETs with significantly lower voltage drop - fast switching for high frequency operation - reverse conduction capability * ISOPLUS i4-PACTM high voltage package - isolated back surface - enlarged creepage towards heatsink - enlarged creepage between high voltage pins - application friendly pinout - high reliability - industry standard outline Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 4.9 5.6 4 0.1 500 200 60 180 40 550 44 3.6 7 8 0.1 V V V mA mA nA ns ns ns ns pF nC V 1.75 K/W Applications * switched mode power supplies * DC-DC converters * resonant converters * lamp ballasts * laser generators, x ray generators VCE(sat) VGE(th) ICES IGES td(on) tr td(off) tf C ies QGon VF RthJC IC = 5 A; VGE = 15 V; TVJ = 25C TVJ = 125C IC = 0.5 mA; VGE = VCE VCE = 0.8VCES; VGE = 0 V; TVJ = 25C TVJ = 125C VCE = 0 V; VGE = 20 V Inductive load, TVJ = 125C VCE = 960 V; IC = 5 A VGE = 15/0 V; RG = 100 W VCE = 25 V; VGE = 0 V; f = 1 MHz VCE = 600V; VGE = 15 V; IC = 7 A (reverse conduction); IF = 5 A IXYS reserves the right to change limits, test conditions and dimensions. (c) 2000 IXYS All rights reserved 1-4 031 IXBF 9N140 IXBF 9N160 Component Symbol TVJ Tstg VISOL FC Symbol dS,dA dS,dA RthCH Weight IISOL 1 mA; 50/60 Hz mounting force with clip Conditions C pin - E pin pin - backside metal with heatsink compound Conditions Maximum Ratings -55...+150 -55...+125 2500 20...120 C C V~ N Dimensions in mm (1 mm = 0.0394") Characteristic Values min. typ. max. 7 5.5 0.15 9 mm mm K/W g (c) 2000 IXYS All rights reserved 2-4 IXBF 9N140 IXBF 9N160 30 TJ = 25C VGE = 17V 15V 30 TJ = 125C VGE = 17V 15V 13V 25 13V 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 IC - Amperes IC - Amperes 20 15 10 5 0 0 2 4 6 8 10 12 14 16 18 VCE - Volts VCE - Volts Fig. 1 Typ. Output Characteristics 30 VCE = 20V Fig. 2 Typ. Output Characteristics 30 25 25 TJ = 25C TJ = 125C TJ = 25C TJ = 125C IF - Amperes IC - Amperes 20 15 10 5 0 4 6 8 10 12 14 20 15 10 5 0 0 2 4 6 8 10 VGE - Volts VF - Volts Fig. 3 Typ. Transfer Characteristics Fig. 4 Typ. Characteristics of Reverse Conduction 15 16 14 12 VCE = 600V IC = 5A ICM - Amperes VGE - Volts 10 8 6 4 2 0 0 10 20 30 40 50 10 TJ = 125C VCEK < VCES 5 IXBF 9N140 IXBF 9N160 0 0 400 800 1200 1600 QG - nanocoulombs VCE - Volts Fig. 5 Typ. Gate Charge characteristics Fig. 6 Reverse Biased Safe Operating Area RBSOA (c) 2000 IXYS All rights reserved 3-4 IXBF 9N140 IXBF 9N160 70 250 VCE = 960V VGE = 15V TJ = 125C 50 40 30 20 0 2 4 6 8 10 12 14 16 td(off )- nanoseconds tfi - nanoseconds 60 RG = 100W VCE = 960V VGE = 15V 200 IC = 5A TJ = 125C 150 100 50 0 0 20 40 60 80 100 120 140 160 IC - Amperes Rg - Ohms Fig. 7 Typ. Fall Time 10 Fig. 8 Typ. Turn Off Delay Time 1 ZthJC - K/W 0.1 Single Pulse 0.01 0.001 0.0001 IXBF09 0.001 0.01 0.1 1 10 Pulse Width - Seconds Fig. 9 Typ. Transient Thermal Impedance (c) 2000 IXYS All rights reserved 4-4 |
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